【Device Papers】Impact of p-NiO and β-Ga₂O₃ doping on the DC characteristics of enhancement-mode p-NiO/β-Ga₂O₃ HJFETs

      Researchers from Shandong Technology and Business University have published a dissertation titled " Impact of p-NiO and β-Ga₂O₃ doping on the DC characteristics of enhancement-mode p-NiO/β-Ga₂O₃ HJFETs " in Journal of Physics: Conference Series.

Abstract

      To optimize the key parameters of enhancement-mode β-Ga₂O₃ devices, this work performs Silvaco TCAD simulations of p-NiO/β-Ga₂O₃ heterojunction field-effect transistors (HJFETs) and systematically investigates how the doping concentrations in the p-NiO layer and the β-Ga₂O₃ epitaxial layer affect the device DC characteristics. The results show that the p-NiO doping concentration has a relatively minor impact on the DC performance, causing only subtle variations near the threshold region and at the high-doping end, and thus can serve as an auxiliary design knob for threshold-voltage tuning and process optimization. In contrast, increasing the β-Ga₂O₃ doping concentration enhances the saturation current and transconductance while reducing the on-resistance. For β-Ga₂O₃ doping concentrations in the range of 5×10¹⁶ to 1×10¹⁷ cm⁻³, the breakdown voltage increases with doping; further increasing the doping concentration leads to a decrease in breakdown voltage. Overall, the β-Ga₂O₃ epitaxial-layer doping should be optimized by balancing on-state performance and breakdown capability, while p-NiO doping can be used as an auxiliary variable for threshold control, providing design guidance for parameter selection and structural optimization of enhancement-mode p-NiO/β-Ga₂O₃ HJFETs.

DOI：

https://doi.org/10.1088/1742-6596/3254/4/042021