【Member News】Guangzhou Tanoxi Technology Breaks Through the P-Type Conductivity Bottleneck in Gallium Oxide, Unlocking Bipolar Device Capabilities

      Recently, Guangzhou Tanoxi Technology Co., Ltd. (hereinafter referred to as “the Company”) has made a key breakthrough in addressing the challenge of p-type conductivity in gallium oxide (Ga₂O₃). The Company has completed the verification of ohmic contacts to p-type gallium oxide, as well as the fabrication and electrical characterization of PN diodes, unlocking the potential of gallium oxide for bipolar devices and providing a new foundation for expanding the technological pathways of gallium oxide power devices.

      For a long time, n-type conductivity has been readily achievable in gallium oxide, whereas p-type conductivity has remained difficult to realize, hindering the development of PN junctions and bipolar devices. This latest progress enables the Company to construct PN junctions within a single gallium oxide material system, expanding device development from unipolar to bipolar architectures and opening up new possibilities for subsequent innovations in device structures and functionalities.

      Contact measurements show that the I–V curve of Ni contacts to p-type gallium oxide exhibits an approximately linear profile and relatively symmetrical characteristics under positive and negative bias, demonstrating good ohmic contact behavior. This provides a contact foundation for current injection and transport in subsequent PN diode development.

Figure 1. Ohmic Contact Characteristics of Ni/P-Type Ga₂O₃. Inset: Schematic of the Test Structure.

Figure 2. Electrical Characteristics of the Gallium Oxide PN Diode: Top Left: C–V Curve; Top Right: Net Doping Concentration Profile; Bottom Left: Forward J–V Curve; Bottom Right: Reverse I–V Curve.

      Building on this progress, the Company further developed a vertical gallium oxide PN diode. At a forward bias of approximately 5 V, the device achieved a current density of 160 A/cm². The reverse voltage sweep exceeded 1.2 kV, demonstrating good forward conduction and kilovolt-level reverse-blocking capabilities. Further characterization through C–V measurements and doping profile analysis provided insights into the junction response, with the net doping concentration remaining generally uniform across the measured region.

      This progress in PN diode development represents a further extension of the Company's collaborative research and development efforts in gallium oxide materials and devices. The Company will continue to advance the optimization of epitaxial materials, electrode contacts, and device structures, while conducting further validation of conduction losses, reverse leakage current, device uniformity, and reliability. These efforts will continuously strengthen its R&D capabilities spanning epitaxial materials through device validation, contributing to the advancement and commercialization of gallium oxide power device technologies.

Company Profile

      Guangzhou Tanoxi Technology Co., Ltd. was founded in May 2022. It is a technology-focused enterprise specializing in the R&D, production and sales of gallium-oxide epitaxial materials and devices.

      Centered on its self-developed Ga₂O₃ epitaxy technology, the Company has built an industrial-grade production line for Ga₂O₃ thin films with fully independent intellectual property rights. Through precise modulation of key epitaxy-process parameters, the Company’s products have reached internationally-advanced benchmarks on a full set of performance indicators.

      The Company devotes itself to R&D and manufacturing of high-quality Ga₂O₃ epitaxial materials, so as to satisfy the market demand for power-electronic devices in sectors such as new-energy vehicles, State Grid of China, rail transit and 5G communications. It strives to deliver domestically self-controllable core-material guarantee and technical-support solutions for the country.

      Website:www.tanoxitech.com

     Contact

      Email: contact@tnxtech.cn

      Tel: +86 191 2051 6329