【Member News】Official Signing! Hangzhou Garen Semiconductor Co., Ltd. Settles in Phase II of Qianwan BioPort

      On November 9, Hangzhou Garen Semiconductor Co., Ltd. held its signing ceremony for entry into Qianwan BioPort in the Development Zone. Jiang Zhangke, President of Transfar Science and Technology City, and Zhang Hui, Chairman and General Manager of Hangzhou Garen Semiconductor Co., Ltd., jointly signed the occupancy agreement. According to the plan, Garen Semiconductor will establish its headquarters offices, R&D facilities, and production operations in Buildings 27 and 8 of Phase II of Qianwan BioPort, advancing the industrialization of gallium oxide semiconductor materials.

      Founded in September 2022, Garen Semiconductor draws on the resources of Zhejiang University's State Key Laboratory of Silicon and Advanced Semiconductor Materials and the Hangzhou International Innovation Center of Zhejiang University. The company has assembled an R&D and production team led by Academician Yang Deren of the Chinese Academy of Sciences as Chief Advisor, bringing together professionals in semiconductor materials research and industrialization. Its efforts are focused on technological breakthroughs in gallium oxide material preparation.

      To address key challenges in gallium oxide single-crystal growth and large-scale production, Garen Semiconductor has independently developed a casting-based crystal growth technology and a large-size MOCVD epitaxy process. These technologies establish a pathway that balances crystal size scaling, growth efficiency, and cost control, paving a distinctive path toward gallium oxide industrialization with Chinese characteristics.

      Building on these achievements, the Company completed a technological iteration from 2-inch to 6-inch products within just two years. In March 2025, it unveiled the world's first 8-inch gallium oxide substrate. In March 2026, it introduced the world's first 8-inch homoepitaxial gallium oxide wafer. In September of the same year, it achieved the world's first 12-inch gallium oxide crystal growth with a constant diameter. According to authoritative third-party testing, key performance indicators have reached internationally leading levels, filling several gaps in global technology.

      The Company has now established a closed-loop industrial chain covering equipment, crystal growth, substrates, and epitaxy. Coordinated exploration across these stages supports continuous technological optimization and provides a foundation for the industrialization of gallium oxide materials.

      Following the signing, Garen Semiconductor plans to establish its headquarters offices, R&D facilities, and production operations in Phase II of Qianwan BioPort. Subsequent work, including site preparation, will be carried out in line with the project's progress, providing additional space for the Company's next stage of development.

      Qianwan BioPort has traditionally focused on artificial intelligence and biotechnology. As more innovative enterprises establish a presence in the park, it is also welcoming new partners from fields such as advanced materials. The convergence of innovation across different sectors, from biotechnology to advanced materials, is making the park's industrial ecosystem increasingly diverse. Leveraging the industrial foundation and resources of Transfar Group, the Overseas Talent Town · Transfar Science and Technology City will continue to connect businesses with facilities, services, and potential partners, creating favorable conditions for enterprise growth and industrial collaboration.

      From sustained breakthroughs in materials technology to the development of a new innovation project, the partnership between Garen Semiconductor and the Overseas Talent Town · Transfar Science and Technology City marks a new chapter in their joint exploration of future industrial opportunities.