【International Papers】Hydrogen-related 3.8 eV UV luminescence in α-Ga₂O₃

      Recently, an article titled Hydrogen related 3.8 eV UV luminescence in was jointly published in the scientific journal AIP Publishing by Sineneneba Clyde University, University of Liverpool and Japan National Institute of Materials α- Paper on Ga₂O₃.

Abstract

      Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga₂O₃ films grown by halide vapor phase epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures, which strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor–acceptor pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (V_Ga-nH) as the acceptor, where n = 1, 2, 3. Previous reports have already suggested the impact of H on the electrical properties of Ga₂O₃, and the present study shows its clear impact on the optical properties of α-Ga₂O₃.

FIG.1 (a) 290 K PL spectrum of sample C with H concentration ([H] = 1.5 × 10¹⁷ cm⁻³). Inset shows the PL spectrum of sample C measured at 290 K in log scale, highlighting the presence of the 3.8 eV peak. (b) 290 K PL spectrum of sample C ([H] = 1.5 × 10¹⁷ cm⁻³) with 280 nm filter (black) and 470 nm filter (red).