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【International Papers】Plasma Nitridation Effect on β-Ga₂O₃ Semiconductors
日期：2023-07-14阅读：166
The research team of Korea Aerospace University and Seoul National University published a report titled Plasma Friction Effect on the scientific journal MDPI β- Paper article on Ga2O3 Semiconductors.
Abstract
The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline β-Ga2O3 thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.
Figure 1. (a) Optical transmittance spectra and Tauc−plot and (b) normalized ratio of N over O from the SIMS depth profile of the β-Ga2O3 thin film at different PN times. In the inset, SIMS depth profile of intrinsic β-Ga2O3 thin film, which was indistinguishable from the depth profile of Ga, O, and N after 1 and 5 min PN treatment time.
Figure 2. Room temperature PL (a) spectra and (b) peak intensity as a function of PN time. PL decay (c) profile (at 501 nm) and (d) time constant of β-Ga2O3 at different PN treatment times. The arrows indicate each axis.
Figure 3. (a) Transient photo-response, (b) typical photocurrent decay curves, (c) two photocurrent decay time constants (τc1 and τc2), and (d) PDCR of β-Ga2O3 MSM PDs at different PN treatment times. In the inset, schematic cross-sectional image of the MSM PD. The arrows indicate each axis.
Paper Link：https://doi.org/10.3390/nano13071199
