【International Papers】Effect of Oxygen Plasma on β-Ga₂O₃ Deep Ultraviolet Photodetectors Fabricated by Plasma-Assisted Pulsed Laser Deposition

      The research team of Hanyang University in South Korea published an article entitled Effect of Oxygen Plasma on the scientific journal ACS Publications β- Paper on Ga₂O₃ Deep Ultraviolet Photodetectors Fabricated by Plasma Assisted Pulsed Laser Deposition.

ABSTRACT

      We fabricated metal–semiconductor–metal-structured β-Ga₂O₃ photodetectors using a plasma-assisted pulsed laser deposition system with various oxygen plasma radio frequency (RF) powers ranging from 0 to 100 W. All optoelectronic properties of the material were enhanced as the RF power increased. β-Ga₂O₃ photodetector with RF power of 100 W showed the best optoelectronic characteristics, such as photoresponsivity of 0.39 A/W, external quantum efficiency of 192.61%, and detectivity of 9.09 × 10¹³ cm Hz^1/2/W. In addition, photo-switching analysis revealed the fastest photoresponse speeds (1.46 and 0.21 s) for on/off switching. These results originate from the decrease in the oxygen vacancy defect concentration in the β-Ga₂O₃ films by the oxygen RF power. Our results suggest that β-Ga₂O₃ photodetectors fabricated with oxygen plasma can optimize and improve the photodetection performance and can be applied for future deep ultraviolet detectors.

Paper Link：https://doi.org/10.1021/acsaelm.3c00066