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【International Papers】Non-equilibrium methods for synthesis and modification of gallium oxide
日期：2023-08-04阅读：175
A research team from the Lobachevsky University and Тomsk State University，etc. have published a dissertation titled "Non-equilibrium methods for synthesis and modification of gallium oxide" in the scientific journal “ResearchGate”.
Abstract
Synthesis and modification of gallium oxide as a wide-bandgap semiconductor is a topical task in the fields of power electronics, UV detectors, gas sensors, telecommunication. In the present work, the Ga2O3 films deposited on sapphire substrates by magnetron sputtering have been studied. The influence of deposition parameters and subsequent annealing on the structure and optical properties of the synthesized films is analyzed. Ion doping of magnetron-deposited films with silicon is carried out by the ion implantation method. It is shown by the Raman scattering and optical transmission spectroscopy that ion irradiation leads to the disordering of the crystal structure, but subsequent annealing results in a partial recovery of the structure. Hall-effect measurements for irradiated and then annealed films do not reveal the formation of a conducting layer. Apparently, this is due to the fact that the main contribution to the resistance is made by grain boundaries in the magnetron-deposited films.
Figure 1. Dependence of Raman spectra on annealing temperature of Ga2O3 magnetron films (a), working pressure, and RF power during the deposition of these films (b).
Figure 2. Raman spectra for magnetron-deposited Ga2O3 films on sapphire irradiated with silicon ions and subsequently annealed. FA means “furnace annealing”. For clarity, the data only for one ion dose are shown.
