【International Papers】High-Speed Plasma Etching of Gallium Oxide Substrates Using Atmospheric-Pressure Plasma with Hydrogen-Helium Mixed Gas

      Researchers from the Osaka University have published a dissertation titled " High-Speed Plasma Etching of Gallium Oxide Substrates Using Atmospheric-Pressure Plasma with Hydrogen-Helium Mixed Gas" in the scientific journal Scientific.Net.

Abstract

      In addition to silicon carbide (SiC) and gallium nitride (GaN), gallium oxide (Ga₂O₃) is attracting attention as a widegap semiconductor material Ga₂O₃, unlike SiC and GaN, is not as hard, but has strong cleavage properties, making highly effective mechanical machining difficult. Thus, the processing of Ga₂O₃ by high-speed etching employing atmospheric-pressure plasma was studied. An extremely high removal rate of 60 μm/min was obtained due to basic processing experiments using hydrogen gas instead of toxic and corrosive chlorine gas as the reaction gas.

Paper Link：https://www.scientific.net/SSP.342.69