【International Papers】Performance Enhancement and In Situ Observation of Resistive Switching and Magnetic Modulation by a Tunable Two-Level System of Mn Dopants in a-Gallium Oxide-based

      Researchers from the College of Physics, Sichuan University have published a dissertation titled " Performance Enhancement and In Situ Observation of Resistive Switching and Magnetic Modulation by a Tunable Two-Level System of Mn Dopants in a-Gallium Oxide-based " in Science Direct.

Abstract

      Purely gallium oxide-based memristors (GOMRs) show great potentials in resistive random-access-memory (RRAM) due to their chemical stability and resistive switching characteristics with R_off/R_on ratios up to 10²; indeed, GOMRs with higher R_off/R_on ratios and more functionalities are more expected. In this study, ferromagnetic amorphous gallium oxide (a-GMO) films with a tunable two-level system of Mn dopants, i.e., Mn²⁺ and Mn³⁺ ions, are prepared by scalable polymer assisted deposition. The Pt/a-GMO/Pt memristors show a high R_off/R_on ratio of 10³, at least one order of magnitude higher than those of previously reported purely GOMRs, thanks to the abundant oxygen vacancies (V_Os)-induced low resistance state and Mn²⁺-enhanced high resistance state. Meanwhile, magnetic modulation (MM) is realized electrically in the a-GOMRs during the RS, through the tuning of bound magnetopolarons (BMPs) by bias voltage-induced V_Os variations, which may be useful for quaternary information coding. Notably, the transition between Mn³⁺ and Mn²⁺ions is observed in the GOMRs, which is closely related to the variations of V_O concentration and BMP amount, providing an in situ tool to probe the V_O-induced RS and BMP-dependent MM. The results give insights to Mn-doped GOMRs and may be useful for design, fabrication, and testing of multifunctional high-performance RRAMs.

Paper Link：https://doi.org/10.1002/adfm.202304749