【International Papers】A compact model of DC I–V characteristics for depleted Ga₂O₃ MOSFET

      Researchers from the State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University have published a dissertation titled "  A compact model of DC I–V characteristics for depleted Ga₂O₃ MOSFET " in Microelectronics Journal.

Abstract

      In this article, we present a novel behavioral compact model based on the hyperbolic tangent function that accurately reproduces the DC current-voltage (I–V) characteristics of the depleted Ga₂O₃ MOSFET. The proposed model fully explores and accounts for the effects of the spacing between the n⁺ region and the gate metal, as well as the gate-length scaling on the static electric properties of Ga₂O₃ MOSFETs. We demonstrate the effectiveness of our model by matching the I–V curves obtained from simulations and experiments, and good agreements are achieved by appropriately adjusting the fitting parameters. In addition, we compare the calculated transconductance and output conductance with the numerically simulated results and observe good agreements. The proposed model is expected to be a valuable tool for circuit design involving depleted Ga₂O₃ MOSFETs. It provides a more accurate and efficient means of simulating the behavior of these devices, which can aid in the development of new and innovative circuit designs. Overall, our model represents a significant contribution to the field of Ga₂O₃ MOSFET research and has the potential to facilitate the continued advancement and optimization of this technology.

Paper Link：https://doi.org/10.1016/j.mejo.2023.105920