【International Papers】Deep ultraviolet–visible highly responsivity self-powered photodetector based on β-Ga₂O₃/GaN heterostructure

      Researchers from the Academy of Scientific & Innovative Research, CSIR-HRDC Campus of India have published a dissertation titled " Deep ultraviolet–visible highly responsivity self-powered photodetector based on β-Ga₂O₃/GaN heterostructure " in Vacuum.

Abstract

      We have reported unique β-Ga₂O₃ nanoscale-strips (β-Ga₂O₃-NSS) morphology on epitaxial Gallium nitride film by thermal oxidation and fabricated heterostructure based self-powered photodetector (PD) operable from 230 nm to 800 nm (UVC to Vis) broad spectral range. The device demonstrates an ultrahigh responsivity of 5.8 × 10³ mAW⁻¹ under 266 nm illuminations at zero bias. The developed broadband photodetector at zero applied bias exhibits excellent responsivity of 2600, 56, and 450 mAW⁻¹ under light illuminations of 355 nm, 455 nm, and 532 nm, respectively. In addition, the device also shows very high responsivity (1.6 × 10⁵ mAW⁻¹) with low noise equivalent power (10⁻¹³ WHz^−1/2) and excellent external quantum efficiency (10⁴%) under the bias of 5 V at 266 nm. The outstanding performance of the developed device is attributed to the light-trapping geometry of the β-Ga₂O₃-nanoscale-strips. The simple architecture of the device opens up new avenues for the fabrication of the next generation of Ga₂O₃-based broadband photodetection devices.

Paper Link：https://doi.org/10.1016/j.vacuum.2023.112570