【Domestic Papers】High-performance (Ga,Sn)O₃-based self-powered solar-blind photodetectors achieved via the sol-gel technique and modulating carrier concentrations

       Researchers from the Hubei University and Huanghe Science and Technology College have published a dissertation titled " High-performance (Ga,Sn)O₃-based self-powered solar-blind photodetectors achieved via the sol-gel technique and modulating carrier concentrations " in Sensors and Actuators A: Physical.

Abstract

      Currently, self-powered solar-blind ultraviolet (UV) photodetectors (PDs) based on Ga₂O₃ have drawn considerable attention owing to their saving energy consumption, high-precision detection, and excellent stability. High-property Ga₂O₃-based solar-blind UV PDs require the growth of crystalline Ga₂O₃ films, which usually needs expensive preparation equipment, and their photoelectric properties are limited by low conductivity of the Ga₂O₃. In order to address these issues, herein, a facile, effective, and low-cost sol-gel method is used to fabricate amorphous (Ga,Sn)O₃-based PDs. Sn⁴⁺ possesses higher valence relative to Ga³⁺, and weaker Sn-O bonds in comparison with Ga-O bonds can increase oxygen vacancies, which are conductive to improving electron concentrations in Ga₂O₃ with intrinsic n-type conductivity, and thus the photoelectric performances of the PDs. Consequently, via adjusting reasonably Sn content, the PDs with 10 mol% Sn presents the most superior photoelectric response with simultaneously a large responsivity of 43.89 mA/W and excellent detectivity of 1.319×10¹² Jones at a light wavelength of 240 nm and 0 V bias, which are far better than those of the PDs based on pure Ga₂O₃. The present work gives an effective and low-cost approach for developing high-property self-powered solar-blind UV PDs.

Paper Link：https://doi.org/10.1016/j.sna.2023.114765