【Member Intro】School of Microelectronics of Xi'an Jiaotong University —— Regular Member

Introduction

      The School of Microelectronics of Xi'an Jiaotong University was developed on the basis of the "applied physics" major with semiconductor physics established in 1959 as its main research direction. It is one of the earliest units engaged in semiconductor technology research and talent training in China. For a long time, the School has been engaged in the field of microelectronics, and has a deep accumulation in the field of microelectronics. The School has extensive cooperation and exchanges with many universities, scientific research institutions and enterprises at home and abroad, and undertakes a lot of national and provincial and horizontal research topics. It has achieved fruitful results in teaching and research, and has won the "National Science Congress Award", "Scientific and Technological Breakthroughs and Major Achievements Award” of the Seventh Five-year Plan and the Eighth”, “the Science and Technology Progress Award of the Ministry of Electronic Industry”, “the Science and Technology Progress Award of the State Education Commission”, “Shaanxi Provincial Science and Technology Progress Award”, and many other awards. For a long time, the School has been rooted in the west, diligently working on education, pioneering and innovative, and has made great contributions to the talent training and technological development in the field of microelectronics. A number of graduated students have become leaders and backbone in the field of microelectronics, enjoying a high reputation at home and abroad.

Innovation Port Campus of Xi'an Jiaotong University

Scientific Research Foundation

      School of Microelectronics of Xi'an Jiaotong University has a perfect semiconductor device process and wide band gap semiconductor device characteristics testing platform, equipped with advanced structural characterization and performance measurement equipment. It has been at the forefront of material microstructure and material transmission electron microscopy research. Semiconductor process equipment include: double-sided lithography machine, ultra-high vacuum oxidation furnace, ion implanter, electron beam / thermal evaporation table, magnetron sputtering system, high-density ICP dry-etching equipment (ICP), plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), etc.; Complete semiconductor device testing and reliability analysis platform include: Keithley semiconductor parameter tester, whose measurable current can reach as low as 10-16 A, and by which rapid pulse test can be carry out; vacuum measurement system from Lakeshore, which can work in the temperature range from 4 to 475 K; Cascade high-power probe table, by which chip-level measurements of 10000 V and 100 A currents can be performed; the Agilent 1505 high-power device and module test system, which can be conducted for 10000 V and 1500 A measurement.

Laboratory and some experimental equipment

Introduction of the Team

      Founded in 2013, the Power Semiconductor Materials and Devices Research Team of Xi'an Jiaotong University has a good research foundation in SiC and GaN power semiconductor devices and power conversion chips. The research team includes 10 professors and associate professors. Under the leadership of two academicians and leading scholars, it has undertaken more than 20 national major projects, national key research and development, national Natural Science Foundation of China and other enterprise cooperation projects. The research results were published in the top conference IEDM in the field of electronic devices, and other international famous journals, such as , IEEE TPE, TED, EDL, APL, JAP. More than 20 patents have been authorized. The research on gallium oxide materials and devices is one of the research directions of semiconductor power devices in Xi Jiaotong University. The research team is one of the earliest teams that started the research in the field of Ga₂O₃ radiation detection around the world. It always adheres to meet the national major strategic needs, and focuses on the frontier research of integrated circuit science and engineering, electronic science and technology, nuclear science and technology, electrical engineering and automation and other interdisciplinary fields, and is committed to the preparation of semiconductor devices and the functional module design with independent intellectual property rights. The research on (super) wide band gap semiconductor devices includes the development of Ga₂O₃ power devices (such as MOSFET, SBD, JBS, etc.) and their energy conversion modules (AC-DC, DC-DC, etc.), and the research on key processes such as new interface state regulation has distinct characteristics.

Achievement

      (Super) wide band gap semiconductor has become an ideal material for the development of new generation power electronic devices and high-power microwave devices, and gradually become an important support for improving the core competitiveness of information technology, high-end equipment manufacturing and other fields. Ultra-wide band gap semiconductor materials and devices represented by gallium oxide (Ga₂O₃) have made technological breakthroughs in recent years. Ga₂O₃ Ga₂O₃ has the characteristics of large band width, high breakdown field strength and low on-resistance, whose Baliga figure of merit  (BFOM) is significantly higher than the existing power semiconductor materials such as Si, SiC, GaN. It has great potential in high voltage and high power electronics applications. It has broad and important application prospects and can meet the requirements for electronic equipment and device, such as more power, higher frequency, smaller size, lighter weight and working under worse working environment. In addition, due to its low intrinsic carrier concentration and good anti-irradiation properties, wide band gap semiconductor Ga₂O₃ has a good application prospect in aerospace, nuclear radiation monitoring, nuclear battery and other fields, and the exploration and research of wide band gap semiconductor in the field of nuclear radiation detection is in the preliminary stage.

      At present, the team has achieved remarkable research results in both aspects.

Ga₂O₃ Power devices and related research results

Research results related to Ga₂O₃ radiation detectors