【International Papers】Sn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV

      Researchers from the Smart Drone Convergence, Korea Aerospace University have published a dissertation titled " Sn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV " in Materials Science in Semiconductor Processing.

Abstract

      An n-type amorphous Ga₂O₃ thin film with a bandgap of 4.9 eV is formed using the Sn-dopant spin-on-glass (SOG) method followed by a drive-in process at 400 °C for 1 h in an Ar atmosphere. The diffused Sn dopants effectively impact the current enhancement of the amorphous Ga₂O₃ thin film. The metal-oxide-semiconductor field-effect transistor (MOSFET) with the Sn-doped amorphous Ga₂O₃ channel layer exhibits typical n-type behavior and well-behaved transistor characteristics presenting two distinct operation regions: linear and saturation. By using a low-temperature deposition method, it becomes possible to create n-type amorphous Ga₂O₃ thin films with a bandgap of 4.9 eV that are highly compatible with various substrates. Furthermore, ultra-shallow junction formation is achieved in the amorphous Ga₂O₃ thin film, which is beneficial for high performance device applications.

Paper Link：https://doi.org/10.1016/j.mssp.2023.107922