【International Papers】Surface Two-Dimensional Hole Gas in Si doped β-Ga₂O₃ Thin Film

      Researchers from the Université Paris-Saclay have published a dissertation titled " Surface Two-Dimensional Hole Gas in Si doped β-Ga₂O₃ Thin Film " in Journal of Materials Science: Materials in Electronics.

Abstract

      Although two-dimensional electron gases have been realized in a number of semiconductor surfaces, examples of two-dimensional hole gases (2DHG) - the counterpart to 2DEG - are still very limited. Besides, owing to the deep energy level nature of potential dopants, achieving acceptor p-type β-Ga₂O₃ is a well-known challenge so far. In this work, we report what appears to be an exceptional p-type 2DHG surface on a Si-doped monoclinic (010) β-Ga₂O₃ crystal which otherwise is n-type in the bulk. The majority of the free carries at the surface have been determined to be holes with a sheet concentration of p ∼ 8.7 × 10¹³ cm⁻² and a puzzlingly high mobility value of µ_h ∼ 80 cm²/(V·s) at room T.

Paper Link：https://doi.org/10.1016/j.jallcom.2023.172713