【International Papers】Record thick κ(ε)-Ga₂O₃ epitaxial layers grown on GaN/c-sapphire

      Researchers from the Ioffe Institute，the Perfect Crystals LLC，the National University of Science and Technology MISiS，the Institute of Microelectronics Technology have published a dissertation titled " Record thick κ(ε)-Ga₂O₃ epitaxial layers grown on GaN/c-sapphire " in Technical Physics, 2023, Vol. 68, No. 3.

Abstract

      Record thick (up to 100 μm) epitaxial layers of a prospective metastable semiconductor Ga₂O₃ were grown by HVPE (Halide Vapor Phase Epitaxy) on GaN buffer layers on c-sapphire substrates. The X-ray diffraction pattern of the layers show that the structure of the layer is a pure kappa(ε)-Ga₂O₃ without any other phases. At the same time, the organization of a domain structure was observed, which manifests itself in the form of pseudohexagonal prisms that retain the orientation of the gallium nitride sublayer. Schottky diodes with nickel contacts were fabricated and the electrical and photoelectric properties of the layers were studied. Capacitance-voltage (C-V) and frequency-capacitance (C-f) dependencies were studied, photocurrent and photocapacitance spectra were measured. Keywords: Gallium oxide, HVPE, epitaxial layers, sapphire substrates.

Paper Link：https://doi.org/10.21883/TP.2023.03.55813.231-22