【Domestic Papers】Research team from Guangdong University of Technology on the Effect of abrasive on tribological behavior and polishing effect of β-Ga₂O₃(100) substrate

      Researchers team from Guangdong University of Technology have published a dissertation titled " Effect of abrasive on tribological behavior and polishing effect of β-Ga₂O₃(100) substrate " in Materials Science in Semiconductor Processing.

Abstract

      Given the problems of easy cleavage and unfavorable surface integrity in the processing of β-Ga₂O₃(100), the effects of abrasive type (diamond, silicon carbide, alumina, cerium oxide) and abrasive particle size (W3, W2, W1, W0.5) on substrate processing were investigated via friction and polishing experiments. The results demonstrated that a strong correlation exists between the surface integrity of the β-Ga₂O₃(100) substrate and abrasive type, and it was determined that the diamond abrasive with sharp cutting edges was optimal. The abrasive particle size significantly affected the friction wear and polishing effect of β-Ga₂O₃(100). The use of fine abrasive particles can effectively inhibit the formation of cleavage pits and scratches. After polishing with the W0.5 diamond, the surface roughness (Ra) of the substrate decreased to 3.8 nm, and the scratch depth decreased to 18 nm. The abrasive particle size significantly affected the friction wear and polishing effect of β-Ga₂O₃(100). The shape and size of the abrasive are crucial factors affecting the processing of the β-Ga₂O₃(100) substrate. The diamond abrasive particle size distribution was uniform, and the axial ratio of the abrasive was predominantly between 0.6 and 0.9. The surface material of the substrate was removed via the “three-body rolling” method, so the polishing effect was optimal.

Paper Link：https://doi.org/10.1016/j.mssp.2023.108059