【International Papers】Growth of polycrystalline gallium oxide films in nitrogen–oxygen–nitrogen, argon, and oxygen ambient

      Researchers from the Universiti Sains Malaysia have published a dissertation titled "Growth of polycrystalline gallium oxide films in nitrogen–oxygen–nitrogen, argon, and oxygen ambient " Journal of Materials Science: Materials in Electronics.

Abstract

      Ga₂O₃ film deposited by RF magnetron sputtering was subjected to annealing in different ambient (N₂–O₂–N₂, argon, and oxygen ambient) at 800 °C. Results divulged the formation of polycrystalline phases ascribed to β-Ga₂O₃ phases in all samples while an additional γ-Ga₂O₃ phase was present for the film annealed in argon ambient. Although oxygen vacancies are present in the film annealed in argon ambient, nitrogen incorporation in the film subjected to annealing in N₂–O₂–N₂ has generated more oxygen vacancies and this brought to a degradation of the film quality by yielding the highest leakage current density, the lowest critical electric field, and the smallest bandgap. An improvement was achieved for the film annealed in oxygen ambient through the repairing of broken bonds in the film. However, a decrease in the critical electric field was obtained due to the existence of oxygen interstitials in the film that might serve as a scattering center.

Paper Link：https://doi.org/10.1007/s10854-023-11709-8