【Member Intro】Hebei Poshing Electronic Technology Co., Ltd —— Regular Member

Company Introduction

      Hebei Poshing Electronic Technology Co., Ltd. is a state-owned high-tech enterprise specialized in the research and development and production of semiconductor epitaxy materials. It belongs to China Electronics Technology Group Co., LTD., formerly known as the epitaxy Research Group of the 13th Research Institute of China Electronics Technology Group Co., LTD. It began to research and development of epitaxy materials in 1962 and established Poshing Company in 2000. It has more than 20 years of research and development and large-scale production experience in the epitaxy industry. Up to now, Poshing Company has formed an annual output of 8.4 million epitaxial sheet production capacity, epitaxial material output, market share in the domestic industry are leading, has become the domestic epitaxial material production enterprises leading.

      The company takes the lead in the stable mass production of 8-inch silicon epitaxial wafers in China, and has also developed the third generation of wide-band gap semiconductor materials Silicon Carbide (SiC) and Gallium Nitride (GaN) products, which break through the physical limit of Si based devices, and are widely used in the field of high temperature, high pressure, high frequency, high power, radiation resistance and other electronic devices. It has irreplaceable advantages in extreme environments and energy saving fields such as aerospace, military industry, nuclear energy, rail transit, electric vehicles and ultra-high voltage power transmission.

      Poshing Company has a high-quality management team with rich theoretical knowledge and practical experience, strong team cohesion, high operation efficiency, rich system resources and industry experience, and a relatively strong ability to control the industry and market. The core technical staff of the team has nearly 30 years of working experience, and the main technical backbone has more than 20 years of working experience, including 6 doctors and 32 masters.

Product introduction

First, Silicon Epitaxial Wafer

Applications:

      The basic material of semiconductor silicon epitaxial wafer has always been a short board in the development of China's semiconductor industry chain. Benefiting from the rapid growth of the market size of downstream power devices, CIS and PMIC simulator parts, the market demand for semiconductor silicon epitaxial wafer has also continued to expand. In the future, with the introduction of more and more intelligent terminals and wearable devices, and the popularity of new applications such as new energy vehicles, 5G communications, and the Internet of Things, the use demand and application range of power devices such as MOSFET, FRD, IGBT, transistor, and analog chip products such as CIS, PMIC will be further expanded. It is expected that the market demand for silicon epitaxial wafers will continue to grow.

Features:

1、Silicon epitaxial wafer belongs to the semiconductor key material, is the basic material of chip manufacturing.

2、Semiconductor silicon epitaxial wafer is mainly prepared on silicon single wafer by epitaxial growth process;

3、The doping process is flexible, and the device parameters such as thickness and resistivity are easy to adjust. The semiconductor silicon epitaxial wafer has many high-quality characteristics, which can significantly improve the performance of the device such as reverse durability and cutoff frequency.

4、The silicon epitaxial wafer has good stability, high reliability and low defect level.

5、Precise control of impurity, resistivity uniformity, flatness and transition zone width of silicon epitaxial wafer.

Second, Silicon Carbide Epitaxial wafer

Applications:

      Silicon Carbide epitaxial wafer is the key material for manufacturing high power and high voltage devices such as SBD, MOS, IGBT, etc. Silicon Carbide products 600~1700V SiC SBD, MOSFET have been industrialized. In addition to the continuous advancement of photovoltaic inverter and new energy vehicles, the fast charging source of consumer electronics and the commercial power supply market of cloud computing data centers have become new application highlights of Silicon Carbide products. Global attention to energy conservation and environmental protection, the rapid development of new energy, Silicon Carbide epitaxial wafer because of its own advantages, in electric vehicles, charging piles, smart grid, rail transit and other industries have a wide range of application prospects.

Features:

1、As a typical representative of the third-generation semiconductor materials, Silicon Carbide epitaxial wafer has the characteristics of wider band gap, higher critical breakdown electric field, faster saturated electron migration and higher thermal conductivity.

2、The Silicon Carbide epitaxial wafer has very stable chemical properties and radiation resistance characteristics, which makes the Silicon Carbide epitaxial wafer have great application prospects in high voltage and high-power devices and high frequency devices.

3、Silicon Carbide epitaxial wafer parameters customized;

4、Large size, low defect high quality Silicon Carbide epitaxial series products.