【Domestic Papers】Two-step Growth of β-Ga₂O₃ on C-Plane Sapphire Using MOCVD for Solar-Blind Photodetector

      The paper was published in the Journal of Semiconductors under the title "Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector.

      In order to improve the crystal quality of Gallium Oxide heteroepitaxy films on sapphire substrate, the epitaxy growth of high-quality Gallium Oxide films was achieved by optimizing the growth temperature of buffer layer between sapphire substrate and epitaxy layer. The Gallium Oxide thin film with A half-height and width of about 0.66° was grown by two-step method. The Gallium Oxide Solar-blind detector was prepared with a response of 1422 A/ W@254 nm, a detection rate of 2.5×10¹⁵ Jones and a response time of 36 ms. The relevant indicators are the international leading level. This work shows that the Gallium Oxide material grown by MOCVD two-step method has great potential in the preparation of high-performance Solar-blind detectors.

Figure 1. (a) XRD ω-2θ scanning of β-Ga₂O₃ films grown at different temperatures and (b) FWHM of rocking curves. The attached figure shows the XRD ω-scan of the film.

Paper Link:doi: 10.1088/1674-4926/45/2/022502