【Member Intro】School of Integrated Circuit Science and Engineering，University of Electronic Science and Technology of China —— Council Member

Unit Introduction

      The predecessor of the School of Integrated Circuit Science and Engineering of UESTC (School of Demonstrative Microelectronics) can be traced back to the Department of Radio Parts established in 1956, with Professor Mao Junye as the first head of the department. The Institute of Microelectronics was established in 1986, and was approved as a national demonstrative microelectronics School in 2015. The college has teaching and research platforms such as National Key Laboratory of Electronic thin Film and Integrated Devices, National Integrated Circuit The integration of Industry and education innovation platform, Sichuan Integrated Circuit The integration of Industry and education innovation platform, Sichuan Power Semiconductor Technology Center, Sichuan Integrated Circuit Experiment Teaching Center, etc. The school has formed a complete scientific research system from materials, devices, design, technology, encapsulation to Microsystems, and is an international leader in power electronics and integrated thin films with obvious advantages. The scientific research tasks undertaken by the College come from the Ministry of Science and Technology, the National Natural Science Foundation of China, the Ministry of Education, the Ministry of Industry and Information Technology and other ministries and local enterprises and institutions, the tasks cover the national key R & D program, the National Natural Science Foundation, GF pre-research, 173, basic scientific research and other types, forming a three-pillar scientific research pattern of "military electronics", "basic research" and "industry-university-research cooperation".

University of Electronic Science and Technology of China Qingshui River Campus Main Building

University of Electronic Science and Technology of China Integrated Circuit School Building

Foundation of Scientific Research

      The School of Integrated Circuit Science and Engineering of UESTC is equipped with advanced semiconductor device preparation and performance testing equipment and has the main instruments for power semiconductor manufacturing and characterization, and has long been in the first echelon of power semiconductor research. The main manufacturing and characterization equipment includes but is not limited to: Plasma degluing system, PECVD system, resistivity testing system, reactive ion etching machine, step projection lithography machine, step high resolution optical microscopy system, inspection microscope, precision automatic scribing machine, three-tube programmed diffusion furnace, deep groove reactive ion etching machine, double-sided lithography machine, adhesive development system, elliptic polarization light thickness gauge, impedance analyzer, two-dimensional compound semiconductor Molecular beam epitaxial growth system, Physical meteorological deposition system, Plasma Enhanced atomic Layer deposition system, Dynamic parameter test system, high power semiconductor test system, high power device test probe stand, ESD waveform capture and analysis system, ESD test system, semiconductor simulation software, high temperature reverse bias test system, high voltage semiconductor characteristic analysis system, power device level Temperature test and analysis system, power cycle assessment and test system, mixed signal oscilloscope, static parameter test system, manual grinding and polishing system, steady-state thermal resistance analyzer, avalanche energy test system, gate characteristics tester, quasi-static tester, surface profiler, etc.

Experimental Equipment

Scientific Research Team

      The research group of "New Power Semiconductor Devices and Integrated Circuits" is one of the member groups of the Power Integration Technology Laboratory of the School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China. It is based on the State Key Laboratory of Electronic Thin Film and Integrated Devices. Led by Professor Luo Xiaorong (Special Professor of "Changjiang Scholars Award Program"), she has been conducting research on ultra-wide band gap Gallium Oxide power devices and integration technology since 2019. The research group consists of 30 members, including 2 doctoral supervisors, 1 master's supervisor, 3 postdoctors, 8 doctoral students and 16 master's students. The team has strong academic ability, a high degree of cohesion and a harmonious and warm scientific research atmosphere. The research group is determined to contribute to China's power semiconductor industry, contributing wisdom and strength.

Scientific Research Achievements

      Owing to its ultra-wide band gap and high critical breakdown electric field, the BFOM of Gallium Oxide is 3444 times that of Si, and high-quality and large-size Gallium Oxide can be grown by a variety of low-cost melt methods, which can meet the development needs of high-power, high-efficiency and miniaturization of the new generation of power supply systems and power electronic devices. Therefore, it has become the focus and focus of domestic and international research, and countries compete to carry out strategic layout of Gallium Oxide research. In recent years, Professor Luo's research group has carried out research on ultra-wide band gap Gallium Oxide devices, made a series of new advances in the research of new Gallium Oxide power rectifier tubes and transistors and their reliability, published many papers in authoritative international journals IEEE TPE, IEEE EDL, IEEE TED and other top conferences ISPSD, and applied for and authorized a number of patents. At present, the team has led and participated in more than 10 national and provincial level projects related to Gallium Oxide, among which Professor Luo Xiaorong, as the chief technology officer, presided over a key project of a national science and technology plan.

Part of the research results