【International Papers】Low-Frequency Noise Characterization of Positive Bias Stress Effect on the Spatial Distribution of Trap in β-Ga₂O₃ FinFET

      Researchers from the Jeonbuk National University have published a dissertation titled "Low-Frequency Noise Characterization of Positive Bias Stress Effect on the Spatial Distribution of Trap in β-Ga₂O₃ FinFET " in Solid-State Electronics.

Abstract

      The reliability of a β-Ga₂O₃ thin-film field-effect transistor is investigated under positive-bias stress (PBS). The transistor has a tri-gate structure with a gate dielectric of Al₂O₃. By characterizing low-frequency noise (LFN), the spatial distribution of trap in the gate dielectric was quantitatively extracted. The measured power spectral density (PSD) followed a 1/f-shape due to trapping and de-trapping of the channel carriers to and from the gate dielectric. Notably, the vertical distribution of the traps perpendicular to the interface of β-Ga₂O₃ and Al₂O₃ was mapped.

Paper Link：https://doi.org/10.1016/j.sse.2024.108882