【International Papers】Perspectives of miniaturization of β-Ga₂O₃ devices with graphene electrodes

      Researchers from the Institute of Photonics and Electronics of the Czech Academy of Sciences have published a dissertation titled "Perspectives of miniaturization of β-Ga₂O₃ devices with graphene electrodes " in  Materials Science in Semiconductor Processing .

Abstract

      Micrometer-scale circular graphene/β-Ga₂O₃ structures are fabricated by transferring graphene layers to (2‾01) and (010) bulk gallium oxide substrates. Focused ion beam etching is used to downscale the area of the graphene/β-Ga₂O₃ junctions, and a nanoprobe-based approach is employed for their electrical characterization in the chamber of the scanning electron microscope. Using this approach, the impact of defects in graphene on the electrical characteristics of the junctions is suppressed. A significant difference between the structures fabricated on (-201) and (010) gallium oxide surfaces is further demonstrated. By numerical fitting of the measured data, several electric charge transport mechanisms are distinguished depending on the applied bias and orientation of the gallium oxide surface.

Original link:https://doi.org/10.1016/j.mssp.2024.108343