【Domestic Papers】Ga₂O₃ Photon-Controlled Diode for Sensitive DUV/X-Ray Detection and High-Resolution Array Imaging Application

      Researchers from the University of Science and Technology of China have published a dissertation titled "Ga₂O₃ Photon-Controlled Diode for Sensitive DUV/X-Ray Detection and High-Resolution Array Imaging Application " in Advanced Functional Materials.

Abstract

      Sensitive high-energy photon detection from UV to X-ray and high-resolution array imaging are critical for medical diagnosis, space exploration, and scientific research. The key challenges for high-performance photodetector and imaging arrays are the effective material and device design strategies for the miniaturization and integration of the device. Here, photon-controlled diodes (i.e., the detector has rectifying characteristics only under light irradiation) are proposed for high-resolution and anti-crosstalk array imaging applications without integrating the switching element. Based on ultra-wide bandgap semiconductor Ga₂O₃, the sensitive DUV/X-ray photon-controlled diodes are realized by the design of high-resistance Ga₂O₃ film and high-barrier contact. The device exhibits remarkable detection performance, including high photo-responsivity (168 A W⁻¹) and specific detectivity (1.45 × 10¹⁵ Jones) under DUV illumination, as well as a high sensitivity (1.23 × 10⁵ µC Gy_air⁻¹ cm⁻²) under X-ray light. Moreover, the low dark current and excellent rectification characteristics are obtained. Furthermore, its potential for high-density and anti-crosstalk array imaging applications is verified. These results not only bring forth new insights in the implementation of high-performance DUV/X-ray photodetector, but also pave a feasible way to realize high pixel density detector array through the simplified fabrication process for high-resolution imaging applications.

Original link:https://doi.org/10.1002/adfm.202405277