【Domestic Papers】4 inch Gallium Oxide Field-Effect Transistors Array with High-k Ta₂O₅ as Gate Dielectric by Physical Vapor Deposition

      Researchers from the Beijing Institute of Technology have published a dissertation titled "4 inch Gallium Oxide Field-Effect Transistors Array with High-k Ta₂O₅ as Gate Dielectric by Physical Vapor Deposition " in physica status solidi (RRL) - Rapid Research Letters.

Abstract

      Field-effect transistors (FETs) with ultra-wide bandgap semiconductor Ga₂O₃ have been fabricated by physical vapor deposition with advantages of low cost, wafer scale, and rapid production. The insulator-like pristine Ga₂O₃ is converted to semiconductor by co-sputtering Sn with post-annealing, which demonstrates a 5.6 × 10⁷ times higher on-state current. Importantly, this Sn-doped Ga₂O₃ sample shows a high breakdown voltage near 500 V. Furthermore, a 4 inch array of Sn-doped Ga₂O₃ FETs with high-k Ta₂O₅ gate dielectric has been fabricated on a silicon substrate, successfully showing a large on-current density of 1.3 mA mm⁻¹, a high I_ON/I_OFF of 2.5 × 10⁶, and a low threshold voltage of 3.9 V, which are extracted from the average 350 devices. This work paves a promising way for Ga₂O₃-based nanoelectronics to serve medium-high voltage with low cost, rapid, and wafer-scale production.

Original link:https://doi.org/10.1002/pssr.202400046