【Domestic Papers】Temperature Dependence of Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diodes

      Researchers from the China Electronic Product Reliability and Environmental Testing Research Institute have published a dissertation titled "Temperature Dependence of Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diodes" in Electronics.

Abstract

      This paper investigates the temperature-dependent effects of gamma-ray irradiation on β-Ga₂O₃ vertical Schottky barrier diodes (SBDs) under a 100 V reverse bias condition at a total dose of 1 Mrad(Si). As the irradiation dose increased, the radiation damage became more severe. The total ionizing dose (TID) degradation behavior and mechanisms were evaluated through DC, capacitance–voltage (C-V), and low-frequency noise (LFN) measurements by varying irradiation, and the test results indicated that TID effects introduced interface defects and altered the carrier concentration within the material. The impact of TID effects was more pronounced at lower temperatures compared to higher temperatures. Additionally, the annealing effect in the high-temperature experimental conditions ameliorated the growth of interface trap defects caused by irradiation. These results suggest that compared to low-temperature testing, the device exhibits higher TID tolerance after high-temperature exposure, providing valuable insights for in-depth radiation reliability studies on subsequent related devices.

Figure 1. Schematic cross-section of β-Ga₂O₃ SBD structure.

Figure 2. (a) Forward current density (J-V) in semi-log-scale at different doses (0 krad(Si), 300 krad(Si), 500 krad(Si), and 1 Mrad(Si)) at a temperature of room temperature and (b) forward current density (lgJ-V) in semi-log-scale at different temperature levels (−25 °C, 0 °C, 25 °C, 50 °C, 75 °C, and 100 °C) with a cumulative dose of 1 Mrad(Si).

Original link:https://doi.org/10.3390/electronics13112215