【International Papers】Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques

      Researchers from the University of Latvia have published a dissertation titled "Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques " in Beilstein Journal of Nanotechnology.

Abstract

      Due to the recent interest in ultrawide bandgap β-Ga₂O₃ thin films and nanostructures for various electronics and UV device applications, it is important to understand the mechanical properties of Ga₂O₃ nanowires (NWs). In this work, we investigated the elastic modulus of individual β-Ga₂O₃ NWs using two distinct techniques – in-situ scanning electron microscopy resonance and three-point bending in atomic force microscopy. The structural and morphological properties of the synthesised NWs were investigated using X-ray diffraction, transmission and scanning electron microscopies. The resonance tests yielded the mean elastic modulus of 34.5 GPa, while 75.8 GPa mean value was obtained via three-point bending. The measured elastic moduli values indicate the need for finely controllable β-Ga₂O₃ NW synthesis methods and detailed post-examination of their mechanical properties before considering their application in future nanoscale devices.

Figure 1: a) X-ray diffraction pattern of β-Ga₂O₃ NWs on silicon substrate. b) TEM image of a β-Ga₂O₃ NW with interlayer spacing of 5.7 Å, indicating [001] growth direction. c) TEM image of a β-Ga₂O₃ NW with orthogonal (11−2) and (−112) planes and interlayer spacing 2.2 Å, indicating [021] growth direction.

Figure 2: a) SEM image of the as-grown Ga₂O₃ NWs on silicon substrate; b) an individual NW with trapezoid cross-section.

DOI：doi.org/10.3762/bjnano.15.58