【Domestic Papers】Researchers from the Xi'an University of Posts and Telecommunications of 10 × 10 Ga₂O₃-based solar-blind UV detector array and imaging characteristic

      Researchers from the Xi'an University of Posts and Telecommunications have published a dissertation titled "10 × 10 Ga₂O₃-based solar-blind UV detector array and imaging characteristic " in Journal of Semiconductors.

Abstract

      A 10 × 10 solar-blind ultraviolet (UV) imaging array with double-layer wire structure was prepared based on Ga₂O₃ film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-to-dark current ratio (PDCR) of 5.5 × 10⁵, responsivity (R) of 4.28 A/W, external quantum efficiency (EQE) of 2.1 × 10³%, detectivity (D^*) of 1.5 × 10¹⁴ Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 °C, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga₂O₃ solar-blind UV detectors.

Fig. 1.  (Color online) The flow chart of 10 × 10 β-Ga₂O₃ solar-blind UV detector array preparation.

Fig. 2.   (a) XRD pattern of Ga₂O₃ after anneal process. (b) UV−visible absorption spectrum of the β-Ga₂O₃ film grown on sapphire substrate. The inset shows E_g of film. (c) the real image of prepared array and local magnification diagram.

DOI：doi.org/10.1088/1674-4926/24030005