【Member News】Annual Production of 10,000 Pieces! The First One in China! Construction of 6-inch Gallium Oxide Single Crystal and Epitaxial Wafer Growth Line Started in Fuyang, Hangzhou

      On September 10, Hangzhou Fujia Gallium Industry Technology Co., LTD. 6-inch Gallium Oxide single crystal and epitaxial wafer growth line started construction in Fuyang, Hangzhou. This is the first 6-inch Gallium Oxide single crystal and epitaxial wafer growth line in China. The 6-inch single crystal growth technology that started at the same time as the international market and the epitaxial wafer technology that is more suitable for mass production will "change lanes and overtake", supporting the high-quality and rapid development of the new Gallium Oxide industry chain of the new wide band gap semiconductor.

      It is understood that at present, only Japan NCT (Novel Crystal Technology, Inc.) has a 6-inch Gallium Oxide mass production plan in the world. NCT's 6-inch Gallium Oxide single crystal and epitaxial wafer growth line is the first 6-inch Gallium Oxide single crystal and epitaxial wafer growth line in Japan. Hangzhou Fujia Gallium Industry is the only company in China that has both 6-inch single crystal growth and epitaxy. The production line is highly integrated with single crystal growth, substrate processing, epitaxial growth and testing. Upon completion of the project, the production line will have an annual production capacity of 10,000 6-inch Gallium Oxide single crystal and epitaxial wafers. The whole production line involves "one-click crystal grow" single crystal growth equipment,  multi-wire saw equipment, high-precision lapping and polishing equipment, chamfering equipment, laser processing equipment, full-automatic wafer cleaning equipment, high-flux epitaxial equipment, surface defect detector, electrical properties detector and other key equipment. Going forward, the 6-inch Gallium Oxide single crystal and the epitaxial wafer will provide stable and controllable high-quality Gallium Oxide materials for downstream device manufacturers.

FIG. 1 6-inch Gallium Oxide single crystal substrate and epitaxial wafer growth line (Fuyang, Hangzhou)

About Us:

      Hangzhou Fujia Gallium Industry Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Precision Machinery. With the vision of "making the world use good materials", the company carries out the industrialization work of wide-band gap semiconductor Gallium Oxide materials. Mainly engaged in the growth of Gallium Oxide single crystal materials, Gallium Oxide substrate and Gallium Oxide research and development, production and sales, the products are mainly used in power devices, microwave radio frequency and photoelectric detection fields.

The company has won a number of honors:

      In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise; In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 37 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium Industry", and 2 software copyrights (crystal growth control software).