【Domestic Papers】Unveiling interface engineering dynamics between Ti and Ga₂O₃ nanowire

      Researchers from the National Tsing Hua University have published a dissertation titled "Unveiling interface engineering dynamics between Ti and Ga₂O₃ nanowire" in Applied Surface Science.

Abstract

      In this study, we investigate the interfacial reactions between Ga₂O₃ nanowires (NWs) and Ti contacts during annealing processes through in-situ transmission electron microscopy (TEM) observations. A thin Ga₃Ti₂ intermetallic compound was observed to form at the Ti/Ga₂O₃ interface, coinciding with a transition in the NW device’s contact behavior from Schottky to ohmic upon annealing at 470 °C. Utilizing in-situ TEM, we monitored the evolution of the Ga₃Ti₂ layer, revealing Ga atoms as the primary diffusing species within the Ga₂O₃ NW, evidenced by asymmetric diffusion at the interface. Ga₃Ti₂ intermetallic compound effectively reducing the energy barrier between Ga₂O₃ NW and Ti electrode, contributing to linear electrical transport characteristics. This investigation underscores the significance of interface engineering and offers valuable insights for future electronic applications utilizing Ga₂O₃ NWs.

DOI：https://doi.org/10.1016/j.apsusc.2024.160612