【Domestic Papers】Ultrathin Sn-doped Ga₂O₃ for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric

      Researchers from the Beijing Institute of Technology have published a dissertation titled "Ultrathin Sn-doped Ga₂O₃ for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric " in Science Bulletin.

      Gallium oxide (Ga₂O₃), a novel ultrawide-bandgap (UWBG) semiconductor, has attracted considerable attention owing to its large bandgap of up to 4.9 eV, a high breakdown electric field of 8 MV/cm, and a high Baliga’s figure of merit exceeding 3000. These remarkable properties strongly support its potential applications in power electronics, extreme environmentresistance devices, and solar-blind detectors. Despite recent advancements in Ga₂O₃ film growth for device fabrication, the reported methods often entail high temperatures of  1000 C, complex processes, and the need for homogeneous substrates, which inevitably escalates production costs, limiting mass production feasibility. In contrast, physical vapor deposition (PVD) methods such as magnetron sputtering have successfully shown advantages for oxide semiconductors and associated devices. These benefits include compatibility with silicon, low cost, low temperature, flexible doping modulation, large-area growth, and rapid production. However, the utilization of PVD methods for UWBG Ga₂O₃ and its application in power devices has been neglected to some extent.

DOI：https://doi.org/10.1016/j.scib.2024.04.059