【Domestic Papers】Enhancement-mode Ga₂O₃ FETs with unintentionally doped (001) β-Ga₂O₃ channel layer grown by metal-organic chemical vapor deposition

      Researchers from the Suzhou Institute of Nano-tech and Nano-Bionics Chinese Academy of Sciences have published a dissertation titled "Enhancement-mode Ga₂O₃ FETs with unintentionally doped (001) β-Ga₂O₃ channel layer grown by metal-organic chemical vapor deposition " in Japanese Journal of Applied Physics.

Abstract

      High-quality unintentionally doped (UID) (001) β-Ga₂O₃ homoepitaxial films were grown on native substrates through metalorganic chemical vapor deposition. The surface parallel grooves were repaired under low temperature and pressure condition, reaching the surface roughness of 2.22 nm and the high electron mobility of 74.6 cm2/Vs. Enhancement-mode metal–oxide–semiconductor field-effect transistors were fabricated on the UID β-Ga₂O₃ film, showing a positive turn-on threshold gate voltage of 4.2 V and a breakdown voltage of 673V. These results can serve a reference for (001) oriented lateral Ga₂O₃ power transistors and may contribute to the development of Ga₂O₃ power devices.

DOI：https://doi.org/10.35848/1347-4065/ad5897