【Domestic Papers】Large piezoelectricity in two-dimensional doped β-Ga₂O₃

      Researchers from the South China Normal University have published a dissertation titled " Large piezoelectricity in two-dimensional doped β-Ga₂O₃ " in Materials Letters.

Abstract

      2D piezoelectric materials that can realize the mutual conversion of mechanical and electrical energy play an important role in nanoelectromechanical devices. As a new generation of ultra-wide band gap semiconductor, the monoclinic β-Ga₂O₃ has received extensive attention and research. In this paper, the inversion center of 2D β-Ga₂O₃ was broken by a metal atom substitutional doping. The values of out-of-plane (in-plane) piezoelectric coefficient d₃₁/d₃₃ (d₁₁) for Cu-doped and Al-doped β-Ga₂O₃ reach −4.04 (3.95) pm/V and −2.91 (0.37) pm/V, respectively. Although they are both two-dimensional structures, the results fall within the same order of magnitude as those of the commonly used bulk piezoelectric materials such as α-quartz (d₁₁ = 2.3 pm/V), AlN (d₃₃ = 5.1 pm/V), and GaN (d₃₃ = 3.1 pm/V). Our research shows a great potential application of doped β-Ga₂O₃ in micro and nano-electromechanical devices such as sensitive sensors, smart wearables, and micro energy converters.

DOI:https://doi.org/10.1016/j.matlet.2024.136803