【International Papers】Charge Neutral Point Shift of a 700 nm-Thick α-Ga₂O₃ Thin-Film Detector under Soft X-ray Irradiation

      Researchers from the Korea Aerospace University have published a dissertation titled "Charge Neutral Point Shift of a 700 nm-Thick α-Ga₂O₃ Thin-Film Detector under Soft X-ray Irradiation " in ACS Applied Electronic Materials.

Abstract

      This study investigates the shift of the charge neutral point (CNP) of 700 nm-thick α-Ga₂O₃ metal–semiconductor-metal (MSM) devices in response to X-ray exposure and relaxation time. The CNP shift is mainly attributed to the generation and recombination of positive ions in the α-Ga₂O₃ thin film. These findings contribute to the understanding of α-Ga₂O₃ MSM X-ray detectors and have the potential to be applied in various fields of X-ray imaging and sensing technologies.

DOI：doi.org/10.1021/acsaelm.4c00928