【Domestic Papers】Researchers From the Shanghai Institute of Optics and Fine Mechanics Investigates the (-101) Plane in β-Ga₂O₃ Crystal

      Researchers from the Shanghai Institute of Optics and Fine Mechanics have published a dissertation titled "The study of (-101) plane in β-Ga₂O₃ crystal" in Applied Surface Science.

Abstract

      This study confirms that the symmetric plane of (001) with respect to the twin boundary in β-Ga₂O₃  is the (101),and it has been systematically characterized. X-ray diffraction has determined that diffraction peaks appear only at positions where the l component of the miller indices hkl is even, and these positions coincide with the diffraction peak positions of the (001) plane. The termination atomic arrangement of the (-101) plane is not exclusively composed of gallium or oxygen atoms, it exists in two forms with hanging bond densities of 1.614 × 10¹⁵/cm² and 2.421 × 10¹⁵/cm², respectively. Wet etching experiments on the (-101) plane reveal distinct defect morphologies compared to the (001) plane, indicating its suitability for distinguishing between these two planes. The Raman modes of (-101) plane coincide with other crystal planes. Through optical transmission spectra, X-ray photoelectron spectra, and Ultraviolet photoelectron spectra, its bandgap width E_g of 4.76 eV, the valence band maximum E_VBM of 3.64 eV and the Schottky barrier height Φ_surf of 1.12 eV were determined. Compared to studies of other crystal planes, it is believed that the (-101) plane also possesses similar application potential.

Fig. 1. (a) photo of β-Ga₂O₃ crystal, (b) the crystal under polarized light.

Fig. 2. XRD results of (a) (001) plane and (b) (-101) plane.

DOI：doi.org/10.1016/j.apsusc.2024.161054