【Domestic Papers】Impact of NaOH Solution Surface Treatment on Al₂O₃/β-Ga₂O₃ MOS Capacitors

      Researchers from the Sun Yat-sen University have published a dissertation titled "Impact of NaOH solution surface treatment on Al₂O₃/β-Ga₂O₃ MOS capacitors" in Semiconductor Science and Technology.

Abstract

      A suitable semiconductor surface treatment could improve the gate dielectric quality and reduce the interface states and traps to enhance the performance of metal–oxide semiconductor capacitors (MOSCAPs). In this paper, β-Ga₂O₃ surface treatment using NaOH solution prior to atomic layer deposition of Al₂O₃ was investigated. In comparison with piranha pretreatment, MOSCAPs with NaOH solution surface pretreatment show a larger maximum accumulation capacitance with less frequency dispersion, reduced charges/traps and interface state density D_it. The improvement in MOSCAPs performance could be attributed to the NaOH solution pretreatment induced slight surface etching effect and relatively effective hydroxylation surface. These results suggest that the process optimization of NaOH solution surface pretreatment could lead to further improvement of β-Ga₂O₃ MOSCAPs and have a potential in application of β-Ga₂O₃ metal–oxide semiconductor field-effect transistors in the future.

DOI： https://doi.org/10.1088/1361-6641/ad59bc