【International Papers】First Demonstration of Sn Diffusion into Gallium Oxide from Poly-Tetraallyl Tin Deposited by Initiated Chemical Vapor Deposition by Thermal Treatment

      Researchers from the Dankook University have published a dissertation titled "First demonstration of Sn diffusion into gallium oxide from poly-tetraallyl tin deposited by initiated chemical vapor deposition by thermal treatment" in Nanotechnology.

Abstract

      Gallium oxide (Ga₂O₃) is attracting attention as a next-generation semiconductor material for power device because it has a wide energy band gap and high breakdown electric field. We deposited a Sn polymer, poly-tetraallyl tin (pTASn), on Ga₂O₃ samples using a disclosed chemical vapor deposition (iCVD) process. The Sn dopant of the Sn polymer layer is injected into the Ga₂O₃ through a heat treatment process. Diffusion model of Sn into the Ga₂O₃ is proposed through secondary ion mass spectroscopy (SIMS) analysis and bond dissociation energy. The fabricated device exhibited typical n-type FET behavior. Ga₂O₃ Sn-doping technology using iCVD will be applied to 3D structures and trench structures in the future, opening up many possibilities in the Ga₂O₃-based power semiconductor device manufacturing process.

DOI：

https://doi.org/10.1088/1361-6528/ad696e