Paper Sharing
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【International Papers】2.44kV Ga₂O₃ vertical trench Schottky barrier diodes with very low reverse leakage current
[ 2023-03-02 ] -
【International Papers】2.32kV Breakdown Voltage Lateral β-Ga₂O₃ MOSFETs with Source-Connected Field Plate
[ 2023-03-02 ] -
【International Papers】1.85kV Breakdown Voltage in Lateral Field-Plated Ga₂O₃ MOSFETs
[ 2023-03-02 ] -
【International Papers】Delay-time analysis in radio-frequency β-Ga₂O₃ field effect transistors
[ 2023-03-02 ] -
【International Papers】1.6kV Vertical Ga₂O₃ FinFETs With Source-Connected Field Plates and Normally-off Operation
[ 2023-03-02 ] -
【International Papers】1.5MeV electron irradiation damage in β-Ga₂O₃ vertical rectifiers
[ 2023-03-02 ] -
【International Papers】Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT
[ 2023-03-02 ] -
【International Papers】Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method
[ 2023-03-02 ] -
【International Papers】Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga₂O₃ semiconductor thin films
[ 2023-03-02 ] -
【Conference Papers】Progress of α-Ga₂O₃ for actual device applications
[ 2023-03-01 ]
