Paper Sharing
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【International Papers】Hydrogen passivation of electron traps and fixed charges in SiO₂/β-Ga₂O₃(001) MOS structures
[ 2025-10-24 ] -
【International Papers】Evidence for carrier compensation by gallium vacancies during annealing of highly Si-doped β-Ga₂O₃
[ 2025-10-24 ] -
【Others Papers】Study of cs adsorption on Mg-doped β-Ga₂O₃(100) surface: A first-principles investigation
[ 2025-10-24 ] -
【Others Papers】Exploring the structural, electronic, and transport properties in thickness-dependent two-dimensional Ga₂O₃ induced by native defects
[ 2025-10-24 ] -
【Others Papers】Tunable optoelectronic and hydrogen evolution reaction properties of decorated 2D materials (Ga₂O₃ monolayer, ZnO monolayer and borophene)
[ 2025-10-24 ] -
【Member Papers】Catastrophic burnout mechanisms of NiO/β-Ga₂O₃ heterojunction diodes irradiated by 1.35 GeV high-energy heavy ions
[ 2025-10-23 ] -
【Member Papers】Passivation engineering enhanced photodetection in β-Ga₂O₃ deep ultraviolet photodetectors
[ 2025-10-23 ] -
【Member Papers】Toughening beta-Ga₂O₃ via mechanically seeded dislocations
[ 2025-10-23 ] -
【Epitaxy Papers】Properties of Monoclinic Gallium Oxide Film and Its Photomemristor Application in Nonlinear RMC Circuit
[ 2025-10-23 ] -
【Epitaxy Papers】Orientation-dependent β-Ga₂O₃ heterojunction diode with atomic layer deposition (ALD) NiO
[ 2025-10-23 ]
