Paper Sharing
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【Epitaxy Papers】Bandgap modulation in self-limited two-dimensional Ga₂O₃ films via defect engineering
[ 2026-03-12 ] -
【Epitaxy Papers】X-ray photoelectron spectroscopy and photoluminescence study of copper and magnesium doped beta-phase Ga₂O₃
[ 2026-03-12 ] -
【Member Papers】Real-time evolution of performance in β-Ga₂O₃ Schottky barrier diodes under on-state stress
[ 2026-03-11 ] -
【Member Papers】First-principles calculations of screw dislocations in β-Ga₂O₃
[ 2026-03-11 ] -
【Others Papers】Electronic structure and defect chemistry of N-doped κ-Ga₂O₃: challenges toward P-type doping
[ 2026-03-11 ] -
【Others Papers】First-Principles Study on the Electronic Structure and Magnetic Properties of Transition Metal-Doped β-Ga₂O₃
[ 2026-03-11 ] -
【Member Papers】Structural and electrical characterization of homoepitaxial (-102) β-Ga₂O₃ layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and emission microscopy
[ 2026-03-10 ] -
【Others Papers】Hydroxyl-facilitated efficient propane dehydrogenation over bare Ga₂O₃ via altering reaction pathway
[ 2026-03-10 ] -
【Device Papers】Impact of fluorine plasma and electrothermal annealing on the interfacial properties at Ni/β-Ga₂O₃ Schottky contact
[ 2026-03-10 ] -
【Device Papers】Reliability Enhancement of a 2.2 kV β-Ga₂O₃ Schottky Barrier Diode With Junction Termination Extension Under High-Temperature Storage Stress
[ 2026-03-10 ]
