Paper Sharing
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【Epitaxy Papers】Strain relaxation in α-AlₓGa₁₋ₓ)₂O₃ thin films grown on M-plane and R-plane sapphire via metalorganic chemical vapor deposition
[ 2025-09-10 ] -
【Epitaxy Papers】Ultraviolet photodetectors based on non-stoichiometric amorphous Ga₂O₃−δ thin films deposited by radio-frequency powder sputtering
[ 2025-09-10 ] -
【Epitaxy Papers】Influence of Finely Tuning Power and Oxygen Flux Ratio on Optoelectronic Properties of Sputtered Amorphous Gallium Oxide Thin Films
[ 2025-09-10 ] -
【International Papers】Versatile Contact Engineering on β-Ga₂O₃ Using EGaIn for Schottky Diodes and MESFET Applications
[ 2025-09-09 ] -
【International Papers】Current Status of Bulk β-Ga₂O₃ and β-(AlₓGa₁₋ₓ)₂O₃ Crystal Growth
[ 2025-09-08 ] -
【International Papers】In situ patterned damage-free etching of three-dimensional structures in β-Ga₂O₃ using triethylgallium
[ 2025-09-08 ] -
【Device Papers】Near-Rectangle Electric Field for a Novel β-Ga₂O₃ Nanomembrane MISFET with Double Linearly-Doped Drift Layer: Analytical Model and Simulation
[ 2025-09-08 ] -
【Device Papers】Carbon-Nanotube/β-Ga₂O₃ Heterojunction PIN Diodes
[ 2025-09-08 ] -
【Device Papers】Investigation of Maximum Gain Amplifier using a Split Stacked Recessed Gate design on β-Ga₂O₃ MOSFET for S - band Applications
[ 2025-09-08 ] -
【Device Papers】High Voltage Design Strategies for Gallium Oxide Power Devices
[ 2025-09-08 ]
