Paper Sharing
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【International Papers】Heterogeneous integration of β-Ga₂O₃ and polycrystalline diamond via SiC and SiO₂ interlayers with optimized adhesion and thermal boundary resistance for power-electronic applications
[ 2026-08-05 ] -
【Member Papers】Impact of Dry-Etching and Surface Repair on the Electrical Performance and Reliability of β-Ga₂O₃ Schottky Barrier Diodes
[ 2026-08-04 ] -
【Device Papers】Performance of κ-Ga₂O₃/GaN HEMTs and Normally off Operation by p-GaN Gate
[ 2026-08-04 ] -
【Device Papers】Band and contact engineering in Ga₂O₃ UV photodetectors and X-ray detectors
[ 2026-08-04 ] -
【Domestic Papers】0.79 mΩ·cm² and 1.1 kV Vertical Mo/β-Ga₂O₃ Deep-Trench-HJBS Diode with Double Drift Layers
[ 2026-08-03 ] -
【International Papers】Compensation-Controlled Adaptive Transport and High-Voltage Operation in β-Ga₂O₃ Single Crystals
[ 2026-08-03 ] -
【Member Papers】Interface-Defect Synergy Engineering of Amorphous Ga₂O₃ for Voltage-Tunable Dual-Mode Optoelectronic Devices: Self-Powered Imaging and Neuromorphic Vision
[ 2026-07-31 ] -
【Epitaxy Papers】Lattice-matched (AlₓScᵧGa₁₋ₓ₋ᵧ)₂O₃/β-Ga₂O₃ heterostructures with widely tunable bandgap
[ 2026-07-31 ] -
【Epitaxy Papers】(001) β-Ga₂O₃ growth with low residual impurity from precursor by cold-wall MOCVD
[ 2026-07-31 ] -
【Member Papers】Interfacial rare-earth oxide-enabled X-ray-tolerant Ga₂O₃ MIS Schottky barrier diodes with significant reverse leakage current suppression
[ 2026-07-30 ]
