Paper Sharing
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【Member Papers】Research on the interface characteristics and leakage mechanisms of β-Ga₂O₃ MFIS capacitors using an HfO₂–ZrO₂ superlattice layer
[ 2025-12-01 ] -
【Domestic Papers】Co-engineering of tellurium doping and strain modulation for effective p-type achieve in β-Ga₂O₃
[ 2025-12-01 ] -
【Device Papers】Influence of acceptor-type trap states on 2DEG density in β-(Al₀.₁₅Ga₀.₈₅)₂O₃/Ga₂O₃ HFET
[ 2025-12-01 ] -
【Device Papers】Growth of tetragonal PtO by molecular-beam epitaxy and its integration into β-Ga₂O₃ Schottky diodes
[ 2025-12-01 ] -
【Device Papers】Schottky diamond diodes in switching operation: a new step towards the future of power electronics
[ 2025-12-01 ] -
【Member Papers】Single-event burnout mechanism in β-Ga₂O₃ Schottky barrier diodes
[ 2025-11-30 ] -
【Epitaxy Papers】High-Temperature Photoluminescence Study of MOCVD-Grown β-Ga₂O₃: Effects of Doping and Crystallinity
[ 2025-11-30 ] -
【Epitaxy Papers】Rapid homoepitaxial growth of (011) β-Ga₂O₃ by HCl-based halide vapor phase epitaxy
[ 2025-11-30 ] -
【Epitaxy Papers】Enhancing the Solar-Blind UV Detection Performance of β-Ga₂O₃ Films Through Oxygen Plasma Treatment
[ 2025-11-30 ] -
【Domestic Papers】Competitive surface adsorption governs unintentional Si incorporation in MOCVD-grown β-Ga₂O₃ (001) homoepilayers
[ 2025-11-26 ]
