Paper Sharing
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【International Papers】Interpretable self-driving sputtering epitaxy reveals human-usable growth rules for β-Ga₂O₃ films
[ 2026-08-17 ] -
【Domestic Papers】Radiation effects in β-Ga₂O₃-based devices: From atomic-scale damage to radiation hardening strategies
[ 2026-08-17 ] -
【Domestic Papers】Machine-learning-guided molecular dynamics simulations of point defect evolution in β-Ga₂O₃ during ion implantation and annealing
[ 2026-08-14 ] -
【Others Papers】Oxygen vacancy-driven hydrogen adsorption in β-Ga₂O₃: A combined DFT and AIMD Investigation for sensing applications
[ 2026-08-14 ] -
【Others Papers】Ga₂O₃ microrods-functionalized In₂O₃ nanostructures for a low-temperature hydrogen gas sensor
[ 2026-08-14 ] -
【Member Papers】NH₃ Plasma Surface Treatment in β-Ga₂O₃: Interface Trap Density Reduction and MOSFET Performance Gains
[ 2026-08-13 ] -
【Member Papers】2026 Roadmap for Ultrawide Bandgap β-Ga₂O₃ Semiconductors: From Melt-Grown Materials to High-Voltage Power Devices
[ 2026-08-13 ] -
【Epitaxy Papers】Structural and luminescent properties of Eu-doped Ga₂O₃ thin films prepared by plasma-assisted pulsed laser deposition
[ 2026-08-13 ] -
【Epitaxy Papers】(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β-Ga₂O₃ homoepitaxial layers on (011) substrates
[ 2026-08-13 ] -
【Member Papers】Synergistic Effects of Oxygen Annealing and Low-fluence Kr Ion Irradiation on 4H-SiC and β-Ga₂O₃
[ 2026-08-12 ]
