Paper Sharing
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【Device Papers】High external quantum efficiency photodetector based on Ga₂O₃ / CH₃NH₃PbI₃
[ 2024-12-11 ] -
【Device Papers】Interfacial modification of CuO/Ga₂O₃ by plasmonic Pt for high performance self-powered solar-blind UV photodetector
[ 2024-12-11 ] -
【Device Papers】Performance enhancement of MOCVD grown Zn-doped β-Ga₂O₃ Deep-Ultraviolet photodetectors on silicon substrates via TiN buffer layers
[ 2024-12-11 ] -
【Member Papers】Researchers from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, investigated the extremely low thermal resistance of β-Ga₂O₃ MOSFETs achieved through the co-integrated design of substrate engineering and device packaging.
[ 2024-12-06 ] -
【International Papers】Pseudo-source gated beta-gallium oxide MOSFET
[ 2024-12-06 ] -
【Epitaxy Papers】Effects of off-axis angles of 4H-SiC substrates on properties of β-Ga₂O₃ films grown by low-pressure chemical vapor deposition
[ 2024-12-06 ] -
【Epitaxy Papers】Transport and electronic structure properties of MBE grown Sn doped Ga₂O₃ homo-epitaxial films
[ 2024-12-06 ] -
【Epitaxy Papers】Effect of Thermal Annealing on Properties Ga₂O₃/GaAs:Cr Heterostructures
[ 2024-12-06 ] -
【Epitaxy Papers】Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga₂O₃ films sputtered on silicon
[ 2024-12-06 ] -
【Device Papers】Ultra-high PDCR(>10⁹) of vacuum-UV photodetector based on Al-doped Ga₂O₃ microbelts
[ 2024-12-06 ]
