Paper Sharing
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【International Papers】Impact of Channel Thickness and Doping Concentration for Normally-Off Operation in Sn-Doped β-Ga₂O₃ Phototransistors
[ 2024-11-21 ] -
【Device Papers】Effects of NiO Doping and Trench Wall Tilt on Ga₂O₃ PiN Diodes Performance
[ 2024-11-21 ] -
【Device Papers】Analysis of deep level defects in nitrogen post-deposition annealed Ga₂O₃/SiC hetero-structured Schottky diodes grown by mist-CVD
[ 2024-11-21 ] -
【Device Papers】High-performance solar-blind photodetector of β-Ga₂O₃ grown on sapphire with embedding an ultra-thin AlN buffer layer
[ 2024-11-21 ] -
【Device Papers】Hetero-interface boosted high-performance a-Ga₂O₃ thin-film phototransistors
[ 2024-11-21 ] -
【International Papers】Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
[ 2024-11-19 ] -
【Epitaxy Papers】Room-temperature Ferromagnetic Semiconductor Fe-doped β-Ga₂O₃ Thin Films with High Saturation Magnetization and Low Coercivity
[ 2024-11-19 ] -
【Epitaxy Papers】Successful electric field modulation to enhance DC and RF features in SOI LDMOS transistors using a β-Ga₂O₃ film
[ 2024-11-19 ] -
【Epitaxy Papers】Enhanced electrical properties of pulsed Sn-doped (-201) β-Ga₂O₃ thin films via MOCVD homoepitaxy
[ 2024-11-19 ] -
【Epitaxy Papers】High-throughput thermodynamic analysis of epitaxial growth of β-Ga₂O₃ by the chemical vapor deposition method from TMGa-H₂O system
[ 2024-11-19 ]
