Paper Sharing
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【International Papers】An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties
[ 2024-11-15 ] -
【International Papers】Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results
[ 2024-11-15 ] -
【Device Papers】Performance Analysis of an Enhancement Mode Operated AlGaN/GaN MIS-HEMT Device with Ga₂O₃ as a Back Barrier
[ 2024-11-15 ] -
【Device Papers】The influence of oxygen partial pressure on the properties of sputtered vertical NiO/β-Ga₂O₃ heterojunction diodes
[ 2024-11-15 ] -
【Device Papers】Single-event burnout in β-Ga₂O₃ Schottky barrier diode induced by high-energy proton
[ 2024-11-15 ] -
【Domestic Papers】Researchers from Xi’an Institute of Optics and Precision Mechanics investigated highly sensitive Ga₂O₃ MSM solar-blind UV photodetector with impact ionization gain
[ 2024-11-14 ] -
【Device Papers】Electrical Properties of GaN/Ga₂O₃ P-N Junction Diodes: A TCAD Study
[ 2024-11-14 ] -
【Device Papers】Improved β-Ga₂O₃ Schottky Barrier Diodes Featuring p-NiO Gradual Junction Termination Extension within Mesa Structure
[ 2024-11-14 ] -
【Device Papers】Comprehensive Study on Trapping-Induced Dynamics in β-Ga₂O₃ Schottky Barrier Diodes Under Continuous Switching Stress
[ 2024-11-14 ] -
【International Papers】Gallium Oxide Semiconductor-Based Large Volume Ultrafast Radiation Hard Spectroscopic Scintillators
[ 2024-11-11 ]
