Paper Sharing
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【Device Papers】Sensing Performance Analysis of Passivated β-(AlₓGa₁₋ₓ)₂O₃ / Ga₂O₃ Schottky Diode Gas Sensor with Catalytic Metals at High Temperature
[ 2025-01-10 ] -
【Device Papers】Enhanced charge transfer across the dual interface of Ga₂O₃@TiO₂/Ti₃C₂ heterojunction for self-powered deep-ultraviolet photodetector
[ 2025-01-10 ] -
【Device Papers】Interface Engineering for Minimizing Trapped Charge Density in β-Ga₂O₃ Schottky Barrier Diodes for High-Performance Power Devices
[ 2025-01-10 ] -
【International Papers】On the structural and bandgap properties of mist-CVD-grown κ-Ga₂O₃ post continuous temperature annealing
[ 2025-01-08 ] -
【International Papers】Suboxides and subselenides: Intermediate reaction products to form Ga₂O₃、Ga₂Se₃、In₂O₃、In₂Se₃、SnO₂ and SnSe₂ during molecular-beam epitaxy
[ 2025-01-08 ] -
【Device Papers】Franz-Keldysh effect in β-Ga₂O₃ Schottky barrier diode under high reverse bias voltage
[ 2025-01-08 ] -
【Device Papers】Ultrasensitive Solar-Blind Phototransistor Based on ZnO/β-Ga₂O₃ Heterojunctions Fabricated Via Zinc-Induced Low-Temperature Dual-Crystallization
[ 2025-01-08 ] -
【Device Papers】Study on the electrical performance degradation mechanism of β-Ga₂O₃ p-n diode under heavy ion radiation
[ 2025-01-08 ] -
【Others Papers】Investigation on High-Temperature Thermoelectric Characteristics of β-Ga₂O₃
[ 2025-01-08 ] -
【Others Papers】Structural Parameters of CVD Synthesized Ga₂O₃ Nanostructures from X-ray Diffraction Analysis Derived by Scherrer, Williamson-Hall, Size-Strain Plot and Halder-Wagner Methods- A Comparative Study
[ 2025-01-08 ]
