Paper Sharing
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【Member Papers】Single-event burnout mechanism in β-Ga₂O₃ Schottky barrier diodes
[ 2025-11-30 ] -
【Epitaxy Papers】High-Temperature Photoluminescence Study of MOCVD-Grown β-Ga₂O₃: Effects of Doping and Crystallinity
[ 2025-11-30 ] -
【Epitaxy Papers】Rapid homoepitaxial growth of (011) β-Ga₂O₃ by HCl-based halide vapor phase epitaxy
[ 2025-11-30 ] -
【Epitaxy Papers】Enhancing the Solar-Blind UV Detection Performance of β-Ga₂O₃ Films Through Oxygen Plasma Treatment
[ 2025-11-30 ] -
【Domestic Papers】Competitive surface adsorption governs unintentional Si incorporation in MOCVD-grown β-Ga₂O₃ (001) homoepilayers
[ 2025-11-26 ] -
【Device Papers】Research and Development Dynamics in Functional Materials: A Comparison Case Study of Power Device Technology through Network Analysis
[ 2025-11-26 ] -
【Device Papers】AlN Passivation-Enhanced Mg-Doped β-Ga₂O₃ MISIM Photodetectors for Highly Responsive Solar-Blind UV Detection
[ 2025-11-26 ] -
【Device Papers】Investigation of Impact Ionization Variations Versus Electric Field and Temperature in Compound Semiconductors for UV-APD Applications
[ 2025-11-26 ] -
【Member Papers】Low-temperature growth of β-Ga₂O₃ film on MgO (100) substrate by HVPE for solar-blind ultraviolet imaging photodetector array
[ 2025-11-25 ] -
【Member Papers】Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices
[ 2025-11-24 ]
