Paper Sharing
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【Device Papers】High-performance solar-blind photodetector of β-Ga₂O₃ grown on sapphire with embedding an ultra-thin AlN buffer layer
[ 2024-11-21 ] -
【Device Papers】Hetero-interface boosted high-performance a-Ga₂O₃ thin-film phototransistors
[ 2024-11-21 ] -
【International Papers】Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
[ 2024-11-19 ] -
【Epitaxy Papers】Room-temperature Ferromagnetic Semiconductor Fe-doped β-Ga₂O₃ Thin Films with High Saturation Magnetization and Low Coercivity
[ 2024-11-19 ] -
【Epitaxy Papers】Successful electric field modulation to enhance DC and RF features in SOI LDMOS transistors using a β-Ga₂O₃ film
[ 2024-11-19 ] -
【Epitaxy Papers】Enhanced electrical properties of pulsed Sn-doped (-201) β-Ga₂O₃ thin films via MOCVD homoepitaxy
[ 2024-11-19 ] -
【Epitaxy Papers】High-throughput thermodynamic analysis of epitaxial growth of β-Ga₂O₃ by the chemical vapor deposition method from TMGa-H₂O system
[ 2024-11-19 ] -
【International Papers】An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties
[ 2024-11-15 ] -
【International Papers】Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results
[ 2024-11-15 ] -
【Device Papers】Performance Analysis of an Enhancement Mode Operated AlGaN/GaN MIS-HEMT Device with Ga₂O₃ as a Back Barrier
[ 2024-11-15 ]
