Paper Sharing
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【Member Papers】Enhancing the quality of homoepitaxial (-201) β-Ga₂O₃ thin film by MOCVD with in situ pulsed indium
[ 2024-04-15 ] -
【International Papers】Heterojunction Devices Fabricated from Sprayed n-Type Ga₂O₃, Combined with Sputtered p-Type NiO and Cu₂O
[ 2024-04-15 ] -
【International Papers】Study of Ga₂O₃ Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range
[ 2024-04-15 ] -
【International Papers】Zinc Dopant-Induced Modulation of Electronic Structure and Defect Emissions in Monoclinic Gallium Oxide
[ 2024-04-15 ] -
【International Papers】Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga₂O₃ Substrate for RF and Power Electronics
[ 2024-04-15 ] -
【International Papers】Optical and optoelectronic properties of gallium oxide films fabricated by the chemical vapour deposition method
[ 2024-04-15 ] -
【Domestic Papers】Effect of Tin Source Temperature on the β-Ga₂O₃ Film Deposited by MOCVD
[ 2024-04-03 ] -
【Domestic Papers】Multiscale Bridged and Synergistic Interface Engineering of Ga₂O₃@rGO as an anode for Lithium-ion Batteries
[ 2024-04-03 ] -
【Domestic Papers】Enhancement of Photodetection Performance of Ga₂O₃/Si Heterojunction Solar-Blind Photodetector Using High Resistance Homogeneous Interlayer
[ 2024-04-03 ] -
【Domestic Papers】Two-step Growth of β-Ga₂O₃ on C-Plane Sapphire Using MOCVD for Solar-Blind Photodetector
[ 2024-04-03 ]
