Paper Sharing
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【Device Papers】High Gain, Low Voltage Solar-Blind Deep UV Photodetector Based on Ga₂O₃/(AlₓGa₁₋ₓ)₂O₃/GaN nBp Heterojunction
[ 2025-03-10 ] -
【Device Papers】Design of an Atomic Layer-Deposited In₂O₃/Ga₂O₃ Channel Structure for High-Performance Thin-Film Transistors
[ 2025-03-10 ] -
【Member Papers】 Xi'an Jiaotong University —— Alloying and strain effect on the electron transport, mechanical, and optical properties of Ga₂O₃ monolayer: A first-principles investigation
[ 2025-03-07 ] -
【Member Papers】Xidian University Haoyue&Han Genquan Team —— Highly Stable Electronics Based on β-Ga₂O₃ for Advanced Memory Applications
[ 2025-03-07 ] -
【International Papers】κ/β-Ga₂O₃ Type-II Phase Heterojunction
[ 2025-03-07 ] -
【Domestic Papers】Nanjing University —— First principles investigation of electron mobility enhancement of β-Ga₂O₃ doped with indium
[ 2025-03-06 ] -
【International Papers】Electronic structure and properties of trapped holes in crystalline and amorphous Ga₂O₃
[ 2025-03-06 ] -
【Epitaxy Papers】Surface Quality Improvement Mechanism of ICP Etching for Ga₂O₃ Schottky Barrier Diode
[ 2025-03-06 ] -
【Epitaxy Papers】Top-Down Micro and Nano Structuring of Wide Bandgap Semiconductors for Ultraviolet Photodetection
[ 2025-03-06 ] -
【Epitaxy Papers】Spontaneous Donor Defects and Voltage-Assisted Hole Doping in Beta-Gallium Oxides under Multiple Epitaxy Conditions
[ 2025-03-06 ]
