Paper Sharing
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【Device Papers】Achieving Face-Selective Ohmic Contact to β-Ga₂O₃ via Anisotropic Trench Structure
[ 2025-09-29 ] -
【Member Papers】Structural and optical properties of high crystalline quality orthorhombic к-Ga₂O₃ heteroepitaxial films grown by HVPE
[ 2025-09-28 ] -
【Domestic Papers】Growth temperature dependent on the structure, device properties and carrier transport mechanisms of β-Ga₂O₃/GaAs heterojunctions
[ 2025-09-28 ] -
【Epitaxy Papers】Double epitaxial growth of ultra-stable Ga₂O₃/CsPbBr₃/CsGaSi₂O₆ heterostructure for multimodal applications
[ 2025-09-28 ] -
【Epitaxy Papers】Effects of terbium doping on the structural and optical properties of Ga₂O₃ films after high temperature annealing
[ 2025-09-28 ] -
【Epitaxy Papers】Plasma damage-free in situ etching of β-Ga₂O₃ using solid-source gallium in the LPCVD system
[ 2025-09-28 ] -
【International Papers】O₂ sensors for λ-probe based on β-Ga₂O₃ microcrystals fabricated from к-Ga₂O₃ epitaxial film by thermal annealing
[ 2025-09-26 ] -
【Domestic Papers】Macro-defect-free homoepitaxial (100) β-Ga₂O₃ by MOVPE: Effect of Miscut angles
[ 2025-09-26 ] -
【Device Papers】Degradation of 2.4-kV Ga₂O₃ Schottky Barrier Diode at High Temperatures Up to 500 ℃
[ 2025-09-26 ] -
【Device Papers】Zn-doped Ga₂O₃ based two-terminal artificial synapses for neuromorphic computing applications
[ 2025-09-26 ]
