Paper Sharing
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【Domestic Papers】Defect-Mediated Threshold Voltage Tuning in β-Ga₂O₃ MOSFETs via Fluorine Plasma Treatment
[ 2026-01-04 ] -
【Device Papers】β-Ga₂O₃/p-Si (100) based vertical diode deposited using RF sputtering for rectifier design
[ 2026-01-04 ] -
【Device Papers】Influence of Low-k/High-k Spacer Materials and Field Plate Engineering on the Breakdown Voltage of β-Ga₂O₃-Based LDMOSFETs
[ 2026-01-04 ] -
【Member Papers】1200 V / 10 A press-pack gallium oxide Schottky barrier diode under a quasi-uniaxial pressure of more than 20 MPa
[ 2025-12-31 ] -
【International Papers】κ-Ga₂O₃/(B)GaAs/GaAs Heterostructures: Study of Optically Active Defects, Design, and Modeling of Solar Cells Based on These Heterostructures
[ 2025-12-31 ] -
【Device Papers】Design of an Enhanced Mode of Ga₂O₃ Vertical MOSFET with Innovative Al₂O₃/NiO/Ga₂O₃ Structure
[ 2025-12-31 ] -
【Device Papers】High-Performance p-Cu₂O/n-β-Ga₂O₃ Heterojunction Barrier Schottky Diodes with Copper Contact
[ 2025-12-31 ] -
【Member Papers】Geometry-Engineered Bipolar Photodetectors for Multivalued Logic-Gate Encrypted Optical Communication
[ 2025-12-30 ] -
【International Papers】Direct Probing of Trap Dynamics in β-Ga₂O₃ Schottky Barrier Diodes Using Single-Voltage-Pulse Characterization
[ 2025-12-30 ] -
【Epitaxy Papers】Effects of Nb and Nb-H Co-doping on the Electrical Properties of β-Ga₂O₃
[ 2025-12-30 ]
