Paper Sharing
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【Device Papers】Tailoring surface properties and optoelectronic response of Ga₂O₃ films through advanced surface state engineering
[ 2025-11-19 ] -
【International Papers】Over 3 kV and Ultra-Low leakage Vertical (011) β-Ga₂O₃ Power Diodes with Engineered Schottky Contact and High-permittivity Dielectric Field Plate
[ 2025-11-18 ] -
【International Papers】Cover Paper in Nano Letters: The First Semiconductor-free-Space Gate transistor
[ 2025-11-18 ] -
【Member Papers】Achievement of High-Quality Gallium Oxide Epitaxial Growth via Machine Learning
[ 2025-11-18 ] -
【Domestic Papers】Towards solar-blind ultraviolet signal visualization of photodetection and electroluminescenc integrated devices through Er doping
[ 2025-11-18 ] -
【Member Papers】Wafer-scale high-performance flexible solar-blind ultraviolet photodetectors based on a-Ga₂O₃ grown by MOCVD
[ 2025-11-17 ] -
【International Papers】Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga₂O₃ on Al₂O₃ (0001) and GaN (0001) Substrates
[ 2025-11-17 ] -
【Domestic Papers】Flame-Made Cr³⁺-Doped Ga₂O₃ Nanoparticles Toward Cryogenic Thermometry and Near-Infrared LEDs
[ 2025-11-17 ] -
【Epitaxy Papers】Crack formation in strained β-(AlₓGa₁₋ₓ)₂O₃ films grown on (010) β-Ga₂O₃ substrates
[ 2025-11-17 ] -
【Epitaxy Papers】Low-temperature plasma-enhanced atomic layer deposition of Ga₂O₃ films using N₂O plasma for silicon surface passivation
[ 2025-11-17 ]
