Paper Sharing
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【International Papers】Post-annealing-free heteroepitaxial growth of (-201)-oriented β-Ga₂O₃ thin films on c-plane sapphire by low-temperature laser-assisted RF sputtering
[ 2026-10-14 ] -
【Mmeber Papers】Nitrogen-graded electrostatic compensation for normally-off β-Ga₂O₃ planar-gate current-aperture vertical electron transistors
[ 2026-10-13 ] -
【Domestic Papers】2-kV Vertical β-Ga₂O₃ MOSFET With p-Cu₂O Body via Barrier Modulated Electron Transport
[ 2026-10-13 ] -
【Device Papers】Band-offset engineering and optical optimization of Cd-free CIGS solar cells using a β-Ga₂O₃ buffer layer
[ 2026-10-13 ] -
【Device Papers】Unveiling design and optimization of β-Ga₂O₃ FinFET for high sensitivity and reliable ammonia gas detection
[ 2026-10-13 ] -
【Device Papers】Investigation of Back-Barrier Engineered III-Nitride HEMT on β-Ga₂O₃ for High-Power Electronic
[ 2026-10-13 ] -
【International Papers】A 7-eV bandgap semiconductor based on silicon-doped α-(AlₓGa₁₋ₓ)₂O₃
[ 2026-10-12 ] -
【Other Papers】Interface-controlled electrical and thermal transport in Ag-decorated β-Ga₂O₃ nanostructures
[ 2026-10-12 ] -
【Other Papers】Hydrothermal process Zn: β-Ga₂O₃ composite or Zn doped β-Ga₂O₃? Unravelling the microstructural and defect evolution
[ 2026-10-12 ] -
【Member Papers】Low-dimensional Ga₂O₃ nanostructures for optoelectronics: From dimensional engineering to device applications
[ 2026-10-10 ]
